Online Real-Time Credit Card Processing Models

Although a variety of payment mechanisms have been developed over the years for online businesses, payment by credit cards remain the leading mechanism for online payments. For real-time online credit card processing, a merchant needs to install a third-party proprietary software in the merchant e-commerce server. However, many issues need to be resolved before integrating a third-party payment solution to a merchant e-commerce system. In this paper, we attempt to address the current state of the online real-time credit card processing models. We also discuss several factors such as cost, complexity and security issues related to implementing such a system

Security Measures in Mobile Commerce: Problems and Solutions

Due to the advent of the Internet, electronic business transactions have exploded around the globe. Along with the Internet, wireless technology has exponentially developed as well. Today, new technologies that allow mobile (cellular) phones and other handheld devices to access the Internet have made wireless business transactions possible. This phenomenon is known as mobile commerce or M-Commerce. It has been predicted that the number of mobile phones connected to the mobile Internet will exceed the number of Internet-connected PCs before 2007. The mobile phone will therefore become the most prevalent device for accessing the Internet. Several industry analysts predict that Mcommerce will constitute a multibillion dollar business by 2005. However, M-Commerce brings new challenges in providing information security as information travels through multiple networks often across wireless links. What must be done to secure financial transactions via mobile commerce? Generally speaking, M-Commerce creates more security concerns than traditional E-Commerce. In this paper, security measures in M-Commerce, wireless security, and the application of cryptography for key generation, authentication, digital signature and digital certificate are discussed

Effect of the Dual Implantation of Gallium on the Electrical Activity of Sulphur in GAAS

This work represents an initial investigation into the electrical properties of Gallium arsenide (GaAs), consecutively doped by ion implantation with two ion species, sulphur and gallium ions, at ion energies of 63 keV and 120 keV respectively. Theoretically at these energies maximum concentrations of sulphur and gallium occur at the same depth into the surface of the GaAs samples. The principal objective of this study is to determine whether the use of dual implantation of gallium and sulphur (Ga+S) can enhance the electrical activity of the resulting active layers when compared with the implantation of sulphur alone. The secondary objective is the comparison of two different substarte materials, semi-insulating chromium-doped substrate and epitaxial substrate, with regard to resulting dopant activation and carrier mobility. Room temperature ion implantation was performed at the Avionics Laboratory, Wright Patterson Air Force Base (WPAFB), Dayton, Ohio, on both type of GaAs samples in doses ranging from 5x1012ions/cm2 to 1X1015ions/cm2• Silicon nitride (Si 3N4 ) encapsulant was used during thermal annealing which was also performed at the Avionics Laboratory at 900 for 30 minutes. The electrical characterization of these samples was made at the Solid State Laboratory, Marquette University Physics Department, by using the van der Pauw technique. Sheet carrier concentration, sheet resistance, Hall sheet coefficient, Hall mobility and activation efficiency were calculated for each sample. The experimental results show that samples with single sulphur-implant generally yield higher activation in comparison to the dual implanted samples. Contrary to expectations, the dual implantation of Ga+S did not enhance the n-type activity of the S-dopant. It might happen that excess substitutional Ga-cations produced p-type activity which compensated the desired n-type activity due to S-implant. Also, a modification of damage centers might occur during implantation and high temperature annealing raising the level of electrical compensation